Title :
Doping Effect on Carrier Occupation and Transport in InAs/GaAs Quantum Dot Infrared Photodetectors: A Capacitance-Voltage Spectroscopy Study
Author :
Zhao, Zhiya ; Lantz, Kevin R. ; Yi, Changhyun ; Stiff-Roberts, Adrienne D.
Author_Institution :
Duke Univ., Durham
Abstract :
Impurity centers induced by dopants in InAs/GaAs quantum-dot systems affect energy level occupation and carrier transport in multi-layer QDIPs. In order to better understand doping effects and to optimize device performance, capacitance-voltage spectra are investigated.
Keywords :
III-V semiconductors; carrier mobility; gallium arsenide; impurity absorption spectra; impurity states; indium compounds; infrared detectors; photodetectors; semiconductor doping; semiconductor quantum dots; InAs-GaAs; capacitance-voltage spectroscopy; carrier occupation; carrier transport; dopants; doping effect; energy level occupation; impurity centers; quantum dot infrared photodetectors; Capacitance-voltage characteristics; Doping; Energy states; Gallium arsenide; Impurities; Infrared detectors; Infrared spectra; Photodetectors; Quantum dots; Spectroscopy;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4453433
