Title :
Extraction of channel mobility in nanowire MOSFETs using Id(Vg) characteristics and random telegraph noise amplitude
Author :
Nazarov, A.N. ; Lee, C.-W. ; Kranti, A. ; Ferain, I. ; Yan, R. ; Akhavan, N. Dehdashti ; Razavi, P. ; Yu, R. ; Colinge, J.P.
Author_Institution :
Lashkaryov Inst. of Semicond. Phys., NAS of Ukraine, Kiev, Ukraine
Abstract :
Combined measurements of random telegraph noise of drain current and drain current - gate voltage characteristic are employed for determination of field-effect charge carrier mobility in surface channel of nanowire inversion mode and accumulation mode MOSFETs with taking into account parasitic source-drain resistance.
Keywords :
MOSFET; accumulation layers; carrier mobility; inversion layers; nanowires; semiconductor device noise; accumulation mode MOSFET; channel mobility; drain current; field effect charge carrier mobility; gate voltage; nanowire MOSFET; nanowire inversion mode MOSFET; parasitic source-drain resistance; random telegraph noise amplitude; surface channel; Current measurement; Logic gates; MOSFETs; Resistance; Semiconductor device measurement; Threshold voltage; Voltage measurement;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on
Conference_Location :
Cork
Print_ISBN :
978-1-4577-0090-3
Electronic_ISBN :
978-1-4577-0089-7
DOI :
10.1109/ULIS.2011.5757991
