• DocumentCode
    3020454
  • Title

    The effect of the doping concentration on nanoscale field effect diode performance

  • Author

    Manavizadeh, N. ; Raissi, F. ; Soleimani, E. Asl

  • Author_Institution
    Fac. of Electr. & Comput. Eng., K.N. Toosi Univ. of Technol., Tehran, Iran
  • fYear
    2011
  • fDate
    14-16 March 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The performance of nanoscale Field Effect Diode as a function of doping concentration is investigated. Our numerical results show that the Ion/Ioff ratio which is a significant parameter in digital application can be varied from 101 to 104 as the doping concentration of source/drain regions increased from 1016 to 1021 cm-3. The figures of merit including intrinsic gate delay time and energy-delay product have been studied for the field effect diodes which are interesting candidates for future logic application.
  • Keywords
    field effect devices; nanoelectronics; semiconductor diodes; doping concentration effect; energy-delay product; intrinsic gate delay time; nanoscale field effect diode performance; source-drain regions; Charge carrier processes; Delay; Doping; Logic gates; MOSFETs; Reservoirs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on
  • Conference_Location
    Cork
  • Print_ISBN
    978-1-4577-0090-3
  • Electronic_ISBN
    978-1-4577-0089-7
  • Type

    conf

  • DOI
    10.1109/ULIS.2011.5757992
  • Filename
    5757992
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3020454