SPICE Model for IGBT Temperature Effects Compared with Measurements

The Insulated Gate Bipolar Transistor(IGBT) is simulated with the proposed unique sub_circuit model, its temperature dependence was implemented in the model. The IGBT wide base conductivity modulated resistor is effectively equivalent by a voltage controlled resistor. This sub_circuit model includes a detailed ambipolar transport analysis of the wide base, low gain, high_level injection bipolar transistor portion and does not assume the quasi_static condition for the transient analysis which can be used to accurately predict the temperature dependence of devices. The model parameters are extracted accurately based on analytical equation via measured data with non_destructive of the device. Employing the MOS_level_8 spice model gives more simulation accuracy and easy convergence. The model was validated against steady-state and transient measurements done on a BSM75GB120DN2(SIEMENS) IGBT at 25°C and 125°C. The simulation results shown excellent agreement with the measured data. The simulated and measured results also indicate that devices with positive temperature coefficient can be paralleled without current hogging problems.