Title :
Modeling the breakdown statistics of Al2O3/HfO2 nanolaminates grown by atomic-layer-deposition
Author :
Conde, A. ; Martínez, C. ; Saura, X. ; Jiménez, D. ; Miranda, E. ; Rafí, J.M. ; Campabadal, F. ; Suñé, J.
Author_Institution :
Dept. d´´Eng. Electron., Univ. Autonoma de Barcelona, Barcelona, Spain
Abstract :
The breakdown (BD) voltage statistics of Al2O3/HfO2 nanolaminate (NL) multilayer dielectrics fabricated by atomic layer deposition (ALD) are nmodeled within the percolation theory. Moreover, the nanolaminate BD properties are predicted from the BD statistics of the separate materials, thus providing a reliable BD design framework for NLs. Comparison with experimental data suggests that the electric field in each of the NL layers, rather than the total gate voltage, is the variable that controls the BD statistics.
Keywords :
alumina; atomic layer deposition; electric breakdown; hafnium compounds; high-k dielectric thin films; laminates; multilayers; nanocomposites; nanofabrication; percolation; Al2O3-HfO2; atomic layer deposition; breakdown voltage statistics; high-k dielectric layers; nanolaminate multilayer dielectrics; percolation theory; Aluminum oxide; Dielectric constant; Logic gates; Materials; Voltage control; Weibull distribution;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on
Conference_Location :
Cork
Print_ISBN :
978-1-4577-0090-3
Electronic_ISBN :
978-1-4577-0089-7
DOI :
10.1109/ULIS.2011.5757995
