• DocumentCode
    3020748
  • Title

    A dynamic latched comparator for low supply voltages down to 0.45 V in 65-nm CMOS

  • Author

    Lin, Yu ; Doris, Kostas ; Hegt, Hans ; Van Roermund, Arthur

  • Author_Institution
    Mixed-signal Microelectron. Group, Eindhoven Univ. of Technol., Eindhoven, Netherlands
  • fYear
    2012
  • fDate
    20-23 May 2012
  • Firstpage
    2737
  • Lastpage
    2740
  • Abstract
    This paper presents a dynamic latched comparator suitable for applications with very low supply voltage. It adopts a circuit topology with a separated input stage and two cross-coupled pairs (nMOS and pMOS) stages in parallel instead of stacking them on top of each other as previous works. This circuit topology enables fast operation over a wide input common-mode voltage and supply voltage range. This comparator is designed in 65-nm CMOS technology with standard threshold transistors (VT≈0.4V). Simulation shows that it achieves 5mV sensitivity for a sampling rate of 5GS/s with 1.2V supply voltage, 10mV for 250MS/s with 0.5V supply voltage and 100MS/s with 0.45V supply voltage. The simulated delay time of the proposed comparator is about 30% shorter than the dual-tail dynamic comparator with 0.5V supply voltage and only one third compared to that of the conventional one with 0.6V supply voltage when they are designed to have a similar input referred offset voltage in 65nm CMOS technology.
  • Keywords
    CMOS integrated circuits; comparators (circuits); low-power electronics; network topology; CMOS technology; circuit topology; common-mode voltage; dual-tail dynamic comparator; dynamic latched comparator; low supply voltage; nMOS; pMOS; size 65 nm; supply voltage range; threshold transistor; voltage 0.45 V; voltage 0.5 V; voltage 0.6 V; voltage 1.2 V; voltage 5 mV; CMOS integrated circuits; CMOS technology; Delay; Integrated circuit modeling; Latches; MOS devices; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (ISCAS), 2012 IEEE International Symposium on
  • Conference_Location
    Seoul
  • ISSN
    0271-4302
  • Print_ISBN
    978-1-4673-0218-0
  • Type

    conf

  • DOI
    10.1109/ISCAS.2012.6271875
  • Filename
    6271875