Title :
Development of 4 GHz bulk acoustic wave resonators by sputtered Pb(Mn,Nb)O3-Pb(Zr,Ti)O3 thin films
Author :
Yamauchi, N. ; Shirai, T. ; Yoshihara, T. ; Hayasaki, Y. ; Matsushima, T. ; Kanno, I. ; Wasa, Kiyotaka
Author_Institution :
Adv. Technol. Dev. Lab., Panasonic Electr. Works, Co., Ltd., Kadoma
Abstract :
The 4 GHz bulk acoustic wave (BAW) resonators have been fabricated by thin films of Pb(Zr,Ti)O3 based ternary perovskite compounds. The Pb(Mn1/3Nb2/3)O3-Pb(Zr,Ti)O3 (PMnN-PZT) thin films were deposited on (100)MgO substrates by RF magnetron sputtering. The PMnN-PZT thin films showed tetragonal crystal structure and highly (001) orientation. The surface roughness of the thin films was about 2 nm. The cross section TEM image of PMnN-PZT thin films showed single c-domain/ single crystal structure. The bulk acoustic wave (BAW) resonators composed by PMnN-PZT thin films were fabricated by MEMS technology. The RF properties of the resonator were evaluated by VNA (Vector Network Analyzer). The BAW resonator by 0.1PMnN-0.9PZT(55/45) thin film exhibited high electro-mechanical coupling constant kt and high Q value at 3.87GHz. Values of kt, Q, and kt 2Q were found to be 0.56, 185 and 58, respectively. These values are highest, in our knowledge, comparing with those of previously reported PZT-BAW resonators.
Keywords :
acoustic resonators; bulk acoustic wave devices; crystal orientation; lead compounds; micromechanical resonators; piezoelectric thin films; sputtered coatings; BAW resonator; MEMS technology; MgO; Pb(MnNb)O3-Pb(ZrTi)O3; RF magnetron sputtering; TEM image; VNA; bulk acoustic wave resonator; electro-mechanical coupling constant; frequency 4 GHz; sputtered thin film; surface roughness; ternary perovskite compounds; vector network analyzer; Acoustic waves; Micromechanical devices; Niobium; Radio frequency; Rough surfaces; Sputtering; Substrates; Surface acoustic waves; Surface roughness; Transistors; BAW resonato; MEMS; PMnN-PZT; Single crystal; Thin films;
Conference_Titel :
Ultrasonics Symposium, 2008. IUS 2008. IEEE
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2428-3
Electronic_ISBN :
978-1-4244-2480-1
DOI :
10.1109/ULTSYM.2008.0473
