DocumentCode :
3020928
Title :
Amorphous silicon: The other silicon
Author :
Sturm, J.C. ; Huang, Y. ; Han, L. ; Liu, T. ; Hekmatshoar, B. ; Cherenack, K. ; Lausecker, E. ; Wagner, S.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., Princeton, NJ, USA
fYear :
2011
fDate :
14-16 March 2011
Firstpage :
1
Lastpage :
4
Abstract :
While crystalline silicon FET´s are the key enablers for the integrated circuit field, amorphous silicon thin film transistors are the key semiconductor of the large-area electronics field, also known as “macroelectronics.” This talk reviews the basic properties of amorphous silicon, and then outlines research trends, driven in large part by new applications. These trends include increased performance, increased stability for analog and high duty cycle applications, flexible substrates for products with new form factors, printing for cost reduction, and crystalline silicon-amorphous silicon interfaces for high performance solar cells.
Keywords :
amorphous semiconductors; elemental semiconductors; field effect transistors; silicon; FET; Si; amorphous silicon thin film transistors; integrated circuit field; macroelectronics; Active matrix liquid crystal displays; Amorphous silicon; Insulators; Logic gates; Substrates; Thin film transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on
Conference_Location :
Cork
Print_ISBN :
978-1-4577-0090-3
Electronic_ISBN :
978-1-4577-0089-7
Type :
conf
DOI :
10.1109/ULIS.2011.5758011
Filename :
5758011
Link To Document :
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