DocumentCode
3020962
Title
High-temperature perspectives of UTB SOI MOSFETs
Author
Kilchytska, V. ; Andrieu, F. ; Faynot, O. ; Flandre, D.
Author_Institution
ICTEAM Inst., Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium
fYear
2011
fDate
14-16 March 2011
Firstpage
1
Lastpage
4
Abstract
In this paper, we analyze, for the first time to our best knowledge, the high-temperature perspectives of Ultra-thin body (UTB) SOI MOSFETs. High-temperature behavior of threshold voltage, subthreshold slope, transconductance maximum and on-current is analyzed in details through measurements and 2D simulations. Particular attention is paid to the effect of buried oxide (BOX) and Si film thicknesses as well as channel doping on the degradation of main device parameters over the temperature range.
Keywords
MOSFET; buried layers; elemental semiconductors; semiconductor doping; silicon; silicon-on-insulator; 2D simulations; Si; Si film thickness; UTB SOI MOSFET; buried oxide; channel doping; high-temperature perspectives; subthreshold slope; threshold voltage; transconductance maximum; ultra-thin body; Degradation; Films; MOSFETs; Semiconductor process modeling; Silicon; Temperature; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on
Conference_Location
Cork
Print_ISBN
978-1-4577-0090-3
Electronic_ISBN
978-1-4577-0089-7
Type
conf
DOI
10.1109/ULIS.2011.5758013
Filename
5758013
Link To Document