Ge quantum dot Schottky diode operated in a 89GHz Rectenna

Author

Karmous, A. ; Xu, H. ; Oehme, M. ; Kasper, E. ; Schulze, J.

Author_Institution

Inst. fur Halbleitertechnik, Univ. Stuttgart, Stuttgart, Germany

fYear

2011

fDate

14-16 March 2011

Firstpage

1

Lastpage

3

Abstract

Schottky diode structures with Ge quantum dots (QDs) have been grown by Molecular Beam Epitaxy (MBE). They have been employed to fabricate NiSi Schottky diodes with Ge dots buried below the metal-semiconductor junctions. These diodes have cut-off frequencies up to 1.1 THz (calculated from S-parameter measurements up to 110GHz). Preliminary results demonstrating the implementation of Ge QD Schottky diode in a mm-wave power detection system (RECTENNA) are also presented.

Keywords

Schottky diodes; elemental semiconductors; germanium; millimetre wave antennas; millimetre wave diodes; molecular beam epitaxial growth; nickel compounds; rectennas; semiconductor junctions; semiconductor quantum dots; submillimetre wave diodes; Ge; NiSi; frequency 89 GHz; metal-semiconductor junctions; mm-wave power detection system; molecular beam epitaxy; quantum dot Schottky diode structure; rectenna; Antenna measurements; Current measurement; Junctions; Rectennas; Schottky diodes; Silicon; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on

Conference_Location

Cork

Print_ISBN

978-1-4577-0090-3

Electronic_ISBN

978-1-4577-0089-7

Type

conf

DOI

10.1109/ULIS.2011.5758017

Filename

5758017