Title :
Monolithic narrow-band active inductors using suspended membrane passive components on silicon substrate
Author :
Sun, Y. ; van Vliet, F.E. ; Tauritz, J.L. ; Baets, R.G.F.
Author_Institution :
Inst. for Microelectron. & Submicron Technol., Delft Univ. of Technol., Netherlands
Abstract :
In this paper 8.8 GHz monolithic narrow-band active inductors based on the DIMES-03 silicon bipolar process are reported. Substrate losses have been reduced using micro-machined suspended membrane inductors and capacitors. Consequently, higher working frequencies and lower power consumption, than those obtainable using a standard bipolar process, have been realized. Better noise performance is predicted. The results are particularly attractive in low power and low noise circuits
Keywords :
bipolar MMIC; elemental semiconductors; inductors; membranes; micromachining; silicon; 8.8 GHz; DIMES-03 silicon bipolar process; Si; low power low noise circuit; micromachined suspended membrane passive component; monolithic narrow-band active inductor; substrate loss; Active inductors; Biomembranes; Capacitors; Energy consumption; Equations; Feedback; Frequency; Narrowband; Parasitic capacitance; Silicon;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications Workshop, 1996. EDMO
Conference_Location :
Leeds
Print_ISBN :
0-7803-3130-3
DOI :
10.1109/EDMO.1996.575804
