A UMTS-900 duplexer

Author

Wang, Kun ; Clark, Doug ; Camnitz, Lovell H. ; Bradley, Paul

Author_Institution

Wireless Semicond. Div., Avago Technol. Inc., San Jose, CA

fYear

2008

fDate

2-5 Nov. 2008

Firstpage

899

Lastpage

902

Abstract

Due to its wide bandwidth (35 MHz) and narrow duplex gap (10 MHz), UMTS900 is a very difficult standard for the implementation of the duplexer with current technologies. In this paper, we present the design and performance of a UMTS-900 duplexer based on thin film bulk acoustic resonator (FBAR) technology. We have used external inductors to compensate the inadequate electromechanical coefficient of resonators. Inductors are used to adjust locations of filter transmission zeros to achieve better attenuation in stopband as well. We have achieved very good insertion loss (less than -2 dB) and the Tx/Rx isolation better than -55/50 dB respectively. The size of the duplexer is 3times3 mm.

Keywords

3G mobile communication; acoustic resonator filters; bulk acoustic wave devices; multiplexing equipment; thin film devices; FBAR technology; UMTS-900 duplexer; electromechanical coefficient; filter transmission zeros; frequency 35 MHz; insertion loss; thin film bulk acoustic resonator design; Attenuation; Bandwidth; Film bulk acoustic resonators; Filtering theory; Frequency; Impedance; Resonance; Resonator filters; Thin film inductors; Transistors; FBAR; RF Filter; UMTS900; duplexer;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 2008. IUS 2008. IEEE

Conference_Location

Beijing

Print_ISBN

978-1-4244-2428-3

Electronic_ISBN

978-1-4244-2480-1

Type

conf

DOI

10.1109/ULTSYM.2008.0217

Filename

4803398