DocumentCode :
3021243
Title :
A compact low-power supply-insensitive CMOS current reference
Author :
Zhao, Chen ; Geiger, Randall ; Chen, Degang
Author_Institution :
Dept. of Electr. & Comput. Eng., Iowa State Univ., Ames, IA, USA
fYear :
2012
fDate :
20-23 May 2012
Firstpage :
2825
Lastpage :
2828
Abstract :
A simple low-power current reference using dual-threshold MOS transistors is introduced. The area required for this reference is small and the sensitivity of the output current to the supply voltage is low. Simulation results show that an implementation of this current reference in a TSMC 0.18um CMOS process with a 1.8V power supply is constant to within ±1.25% over the temperature range of -10°C to 100°C. In this implementation, the active area is 86 μm2, the power dissipation is 72μW, and the worst process corner nonlinearity due to temperature variations is bounded by ±4.16%.
Keywords :
CMOS integrated circuits; MOSFET; low-power electronics; reference circuits; TSMC CMOS process; compact low-power supply-insensitive CMOS current reference; dual-threshold MOS transistors; power dissipation; process corner nonlinearity; simple low-power current reference; size 0.18 mum; temperature variations; voltage 1.8 V; CMOS integrated circuits; Equations; Ions; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (ISCAS), 2012 IEEE International Symposium on
Conference_Location :
Seoul
ISSN :
0271-4302
Print_ISBN :
978-1-4673-0218-0
Type :
conf
DOI :
10.1109/ISCAS.2012.6271899
Filename :
6271899
Link To Document :
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