Spurious vibration suppression by film thickness control for FBAR

Author

Tanifuji, Shoichi ; Aota, Yuji ; Oguma, Hiroshi ; Kameda, Suguru ; Takagi, Tadashi ; Tsubouchi, Kazuo

Author_Institution

Res. Inst. of Electr. Commun., Tohoku Univ., Sendai

fYear

2008

fDate

2-5 Nov. 2008

Firstpage

2193

Lastpage

2196

Abstract

We have successfully fabricated 5 GHz band FBAR using aluminium nitride (AlN) film by metal organic chemical vapor deposition (MOCVD) method on SiO₂/Si substrate. However, large spurious existed between resonant frequency and antiresonant frequency on admittance characteristics of prototype FBAR. We analyzed spurious vibration mechanism using three-dimensional (3-D) simulation. Spurious vibration mode was longitudinal thickness mode by simulation results. Therefore, we completely suppressed the spurious vibration by designing film thickness.

Keywords

III-V semiconductors; MOCVD coatings; acoustic resonators; aluminium compounds; bulk acoustic wave devices; semiconductor thin films; silicon-on-insulator; thickness control; vibration control; wide band gap semiconductors; AlN; FBAR; MOCVD method; SiO₂-Si; admittance characteristics; aluminium nitride film; film bulk acoustic resonator; film thickness control; metal organic chemical vapor deposition; resonant frequency; spurious vibration suppression; three-dimensional simulation; Aluminum; Chemical vapor deposition; Film bulk acoustic resonators; MOCVD; Organic chemicals; Resonant frequency; Semiconductor films; Substrates; Thickness control; Vibration control;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 2008. IUS 2008. IEEE

Conference_Location

Beijing

Print_ISBN

978-1-4244-2428-3

Electronic_ISBN

978-1-4244-2480-1

Type

conf

DOI

10.1109/ULTSYM.2008.0543

Filename

4803402