Title :
High efficiency InGaP/GaAs HBT power amplifiers
Author :
Blanck, H. ; Delage, S.L. ; Cassette, S. ; Floriot, D. ; Chartier, E. ; diForte-Poisson, M.A. ; Watrin, E. ; Bourne, P.
Author_Institution :
Lab. Central de Recherches, Thomson-CSF, Orsay, France
Abstract :
The goal of this paper is to give an overview of the performances of InGaP HBTs for X-band power applications. A reminder of the peculiarities concerning this device, compared to the more conventional GaAlAs/GaAs HBT, is given as an introduction. A presentation of some recent Thomson-CSF X-band power results are presented and compared to the literature. Finally, a synthesis of the latest results in HBT reliability is presented. This last point is the very challenging aspect of HBT technology, since the present RF performances are sufficient for X-band applications
Keywords :
III-V semiconductors; MMIC power amplifiers; bipolar MMIC; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; microwave power amplifiers; microwave power transistors; power bipolar transistors; semiconductor device reliability; HBT power amplifiers; HBT reliability; InGaP-GaAs; MMIC; SHF; Thomson-CSF; X-band power applications; Doping; Etching; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; MMICs; Microwave oscillators; Passivation; Photonic band gap; Radio frequency;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications Workshop, 1996. EDMO
Conference_Location :
Leeds
Print_ISBN :
0-7803-3130-3
DOI :
10.1109/EDMO.1996.575812
