High efficiency InGaP/GaAs HBT power amplifiers

Author

Blanck, H. ; Delage, S.L. ; Cassette, S. ; Floriot, D. ; Chartier, E. ; diForte-Poisson, M.A. ; Watrin, E. ; Bourne, P.

Author_Institution

Lab. Central de Recherches, Thomson-CSF, Orsay, France

fYear

1996

fDate

25-26 Nov 1996

Firstpage

115

Lastpage

119

Abstract

The goal of this paper is to give an overview of the performances of InGaP HBTs for X-band power applications. A reminder of the peculiarities concerning this device, compared to the more conventional GaAlAs/GaAs HBT, is given as an introduction. A presentation of some recent Thomson-CSF X-band power results are presented and compared to the literature. Finally, a synthesis of the latest results in HBT reliability is presented. This last point is the very challenging aspect of HBT technology, since the present RF performances are sufficient for X-band applications

Keywords

III-V semiconductors; MMIC power amplifiers; bipolar MMIC; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; microwave power amplifiers; microwave power transistors; power bipolar transistors; semiconductor device reliability; HBT power amplifiers; HBT reliability; InGaP-GaAs; MMIC; SHF; Thomson-CSF; X-band power applications; Doping; Etching; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; MMICs; Microwave oscillators; Passivation; Photonic band gap; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications Workshop, 1996. EDMO

Conference_Location

Leeds

Print_ISBN

0-7803-3130-3

Type

conf

DOI

10.1109/EDMO.1996.575812

Filename

575812