Characteristics of AlGaAs/GaAs and InGaP/GaAs HBTs at high temperature

Author

Bashar, S.A. ; Amin, F.A. ; Rezazadeh, A.A. ; Crouch, M.A.

Author_Institution

Dept. of Electron. & Electr. Eng., King´´s Coll., London, UK

fYear

1996

fDate

25-26 Nov 1996

Firstpage

126

Lastpage

131

Abstract

A comparison between MOCVD grown AlGaAs/GaAs and InGaP/GaAs HBTs showed a relatively constant DC current gain as a function of temperature upto 300°C for the latter devices. A novel high temperature ohmic contact using ZrB₂ diffusion barrier has been developed and found to be suitable for HBTs operating at elevated temperatures. This barrier has been successfully employed in the fabrication of InGaP/GaAs HBTs which operated at 200°C for 18 hours without any significant change to device performance

Keywords

III-V semiconductors; aluminium compounds; diffusion barriers; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; ohmic contacts; vapour phase epitaxial growth; zirconium compounds; 200 C; 25 to 300 C; AlGaAs-GaAs; AlGaAs/GaAs HBTs; DC current gain; InGaP-GaAs; InGaP/GaAs HBTs; ZrB₂; ZrB₂ diffusion barrier; fabrication; high temperature; high temperature ohmic contact; Educational institutions; Fabrication; Gallium arsenide; Gold; Heterojunction bipolar transistors; MOCVD; Ohmic contacts; Optical devices; Silicon; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications Workshop, 1996. EDMO

Conference_Location

Leeds

Print_ISBN

0-7803-3130-3

Type

conf

DOI

10.1109/EDMO.1996.575814

Filename

575814