Microwave noise parameters of HEMTs vs. temperature by a simplified measurement procedure

Author

Caddemi, A. ; Paola, A. Di ; Sannino, M.

Author_Institution

Dipartimento di Ingegneria Elettrica, Palermo Univ., Italy

fYear

1996

fDate

25-26 Nov 1996

Firstpage

153

Lastpage

157

Abstract

The performance of microwave noise parameters of HEMTs vs. temperature has been investigated by applying a new simplified measurement procedure, such method relies on the extraction of a noisy circuit model from measured scattering parameters together with one noise figure measurement in input matched conditions, (namely, F₅₀). Then the four noise parameters of the device under test are extracted using a suitable computer-aided model analysis. Further investigation have been carried out to verify the reliability of the prediction of F₅₀ values vs. temperature by means a simple noise temperature ratio

Keywords

S-parameters; equivalent circuits; high electron mobility transistors; microwave field effect transistors; semiconductor device models; semiconductor device noise; semiconductor device testing; F₅₀ values; HEMTs; computer-aided model analysis; input matched conditions; measurement procedure; microwave noise parameters; noise figure measurement; noisy circuit model; scattering parameters; Circuit noise; Circuit testing; HEMTs; Impedance matching; MODFETs; Noise figure; Noise measurement; Scattering parameters; Signal to noise ratio; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications Workshop, 1996. EDMO

Conference_Location

Leeds

Print_ISBN

0-7803-3130-3

Type

conf

DOI

10.1109/EDMO.1996.575819

Filename

575819