DocumentCode :
3021529
Title :
Microwave noise parameters of HEMTs vs. temperature by a simplified measurement procedure
Author :
Caddemi, A. ; Paola, A. Di ; Sannino, M.
Author_Institution :
Dipartimento di Ingegneria Elettrica, Palermo Univ., Italy
fYear :
1996
fDate :
25-26 Nov 1996
Firstpage :
153
Lastpage :
157
Abstract :
The performance of microwave noise parameters of HEMTs vs. temperature has been investigated by applying a new simplified measurement procedure, such method relies on the extraction of a noisy circuit model from measured scattering parameters together with one noise figure measurement in input matched conditions, (namely, F50 ). Then the four noise parameters of the device under test are extracted using a suitable computer-aided model analysis. Further investigation have been carried out to verify the reliability of the prediction of F50 values vs. temperature by means a simple noise temperature ratio
Keywords :
S-parameters; equivalent circuits; high electron mobility transistors; microwave field effect transistors; semiconductor device models; semiconductor device noise; semiconductor device testing; F50 values; HEMTs; computer-aided model analysis; input matched conditions; measurement procedure; microwave noise parameters; noise figure measurement; noisy circuit model; scattering parameters; Circuit noise; Circuit testing; HEMTs; Impedance matching; MODFETs; Noise figure; Noise measurement; Scattering parameters; Signal to noise ratio; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications Workshop, 1996. EDMO
Conference_Location :
Leeds
Print_ISBN :
0-7803-3130-3
Type :
conf
DOI :
10.1109/EDMO.1996.575819
Filename :
575819
Link To Document :
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