Title :
A characterisation technique for the 2-port nonlinear capacitance of short channel FETs
Author :
Webster, D.R. ; Haigh, D.G.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
Abstract :
In this paper a novel technique for characterising the nonlinear behaviour of the 2-port capacitance of a short channel FET in the Total Charge model form is described. Simulations and measurements are presented. It was found that the 1-port parts of this nonlinearity can be interpreted directly from the measurements, whereas the component arising from charge redistribution requires some post processing. We have also presented a relationship between the Total Charge and Split Charge capacitor models, demonstrating that they have identical terminal behaviour in large signal circuit simulators
Keywords :
Schottky gate field effect transistors; capacitance; equivalent circuits; semiconductor device models; semiconductor device testing; 2-port nonlinear capacitance; MESFET; characterisation technique; charge redistribution; large signal circuit simulators; nonlinear behaviour; short channel FETs; split charge capacitor model; terminal behaviour; total charge model; Capacitance; Capacitors; Charge measurement; Circuit simulation; Circuit testing; Current measurement; Equivalent circuits; FETs; MESFETs; Voltage;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications Workshop, 1996. EDMO
Conference_Location :
Leeds
Print_ISBN :
0-7803-3130-3
DOI :
10.1109/EDMO.1996.575820
