Title :
Trial manufacture of 26 GHz band solid state power amplifier (SSPA) module
Author :
Yajima, M. ; Hisada, Y. ; Ishida, Y. ; Saito, Y. ; Yamamoto, K. ; Murakami, S. ; Tanaka, S. ; Goto, N. ; Honjo, K.
Author_Institution :
Office of Res. & Dev., Nat. Space Dev. Agency of Japan, Tokyo, Japan
Abstract :
In this paper, we describe the results of trial manufacture of 26 GHz band Solid State Power Amplifier (SSPA) Module. This Module is composed of two common-base (CB) HBT (Heterojunction Bipolar Transistor) chips whose fmax is over 200 GHz with high power density by using selective regrowth of base contact layer. It has achieved output power of 3.2 W (35.1 dBm), power-added efficiency (PAE) of 13.:3%. Its gain is 4.7 dB because of unbalance between cells, so PAE is small, but high output power, PAE and gain can be achieved by using better balanced HBT chips which NEC has developing
Keywords :
bipolar transistor circuits; heterojunction bipolar transistors; microwave power amplifiers; 13.3 percent; 26 GHz; 3.2 W; 4.7 dB; SSPA module; base contact layer; common-base HBT chip; gain; manufacture; output power; power-added efficiency; selective regrowth; solid state power amplifier; Energy consumption; Frequency; Heterojunction bipolar transistors; Manufacturing; National electric code; Performance gain; Power amplifiers; Power generation; Satellites; Solid state circuits;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications Workshop, 1996. EDMO
Conference_Location :
Leeds
Print_ISBN :
0-7803-3130-3
DOI :
10.1109/EDMO.1996.575822
