DocumentCode :
3021720
Title :
Modelling Intersubband Electroabsorption Modulation
Author :
Wong, K.-M. ; Allsopp, D.W.E.
Author_Institution :
Univ. of Bath, Bath
fYear :
2007
fDate :
6-11 May 2007
Firstpage :
1
Lastpage :
2
Abstract :
The scope for using intersubband absorption for electroabsorption modulation has been investigated. Rapid changes in intersubband absorption coefficient with electric field are predicted for modulation doped In0.53Ga0.47As/AlAs deep single and coupled quantum wells.
Keywords :
III-V semiconductors; aluminium compounds; electric fields; electroabsorption; electron absorption; gallium arsenide; gallium compounds; quantum wells; In0.53Ga0.47As-AlAs; coupled quantum wells; deep single quantum wells; electric field; electroabsorption modulation; intersubband absorption; Absorption; Energy states; Epitaxial layers; Indium phosphide; Modulation coding; Optical modulation; Optical saturation; PIN photodiodes; Transmission line matrix methods; Ultrafast optics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
Type :
conf
DOI :
10.1109/CLEO.2007.4453490
Filename :
4453490
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3021720
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