• DocumentCode
    3021720
  • Title

    Modelling Intersubband Electroabsorption Modulation

  • Author

    Wong, K.-M. ; Allsopp, D.W.E.

  • Author_Institution
    Univ. of Bath, Bath
  • fYear
    2007
  • fDate
    6-11 May 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The scope for using intersubband absorption for electroabsorption modulation has been investigated. Rapid changes in intersubband absorption coefficient with electric field are predicted for modulation doped In0.53Ga0.47As/AlAs deep single and coupled quantum wells.
  • Keywords
    III-V semiconductors; aluminium compounds; electric fields; electroabsorption; electron absorption; gallium arsenide; gallium compounds; quantum wells; In0.53Ga0.47As-AlAs; coupled quantum wells; deep single quantum wells; electric field; electroabsorption modulation; intersubband absorption; Absorption; Energy states; Epitaxial layers; Indium phosphide; Modulation coding; Optical modulation; Optical saturation; PIN photodiodes; Transmission line matrix methods; Ultrafast optics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-55752-834-6
  • Type

    conf

  • DOI
    10.1109/CLEO.2007.4453490
  • Filename
    4453490