All-Metal-Nitride RRAM Devices

Author

Zhiping Zhang ; Bin Gao ; Zheng Fang ; Xinpeng Wang ; Yanzhe Tang ; Joon Sohn ; Wong, H.-S Philip ; Wong, S. Simon ; Guo-Qiang Lo

Author_Institution

Inst. of Microelectron., Agency for Sci., Technol. & Res., Singapore, Singapore

Volume

36

Issue

1

fYear

2015

fDate

Jan. 2015

Firstpage

29

Lastpage

31

Abstract

This letter presents the novel CMOS-compatible all-metal-nitride resistive random access memory (RRAM) devices based on the TiN/AlN/TiN stack. The device has low operation current <;100 μA, retention of > 3×10⁵ s at 150 °C, and ac endurance of up to 10⁵ Hz. The device switch characteristics are found to agree with the filamentary switch mechanism. In addition, the RRAM devices built with an additional hafnium nitride capping layer have showed less switch voltage variations and stable switch characteristics.

Keywords

CMOS memory circuits; aluminium compounds; hafnium compounds; resistive RAM; titanium compounds; AC endurance; CMOS compatible device; TiN/AlN/TiN stack; all-metal-nitride RRAM device; filamentary switch characteristic; hafnium nitride capping layer; low operation current; resistive random access memory; switch voltage variation; Electrodes; III-V semiconductor materials; Ions; Resistance; Silicon; Switches; Tin; Aluminium nitride (AlN); Hafnium nitride (HfN); Titanium Nitride (TiN); bipolar switching; hafnium nitride (HfN); resistive random access memory (RRAM); titanium nitride (TiN);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2367542

Filename

6949104