DocumentCode
3021830
Title
TID and SEE Response of Advanced 4G NAND Flash Memories
Author
Oldham, T.R. ; Suhail, M. ; Friendlich, M.R. ; Carts, M.A. ; Ladbury, R.L. ; Kim, H.S. ; Berg, M.D. ; Poivey, C. ; Buchner, S.P. ; Sanders, A.B. ; Seidleck, C.M. ; LaBel, K.A.
Author_Institution
Perot Syst. Gov. Services, Inc., Greenbelt, MD
fYear
2008
fDate
14-18 July 2008
Firstpage
31
Lastpage
37
Abstract
We present total dose and SEE responses for 4G NAND flash memories by three different manufacturers. The SEE response is scaled to predict the response to atmospheric neutrons at aircraft altitudes and at sea level using the figure of merit.
Keywords
NAND circuits; flash memories; integrated memory circuits; neutron effects; radiation hardening (electronics); 4G NAND flash memories; SEE response; TID response; aircraft altitudes; atmospheric neutrons; figure of merit; sea level; single event effects; storage capacity 4 Gbit; total ionizing dose; Aircraft; Circuit testing; Error analysis; Manufacturing; NASA; Neutrons; Orbital calculations; Radio access networks; Sea level; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop, 2008 IEEE
Conference_Location
Tucson, AZ
Print_ISBN
978-1-4244-2545-7
Type
conf
DOI
10.1109/REDW.2008.12
Filename
4638610
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