DocumentCode
3021887
Title
Investigation of the Mechanism of Stuck Bits in High Capacity SDRAMs
Author
Scheick, Leif ; Guertin, Steve ; Nguyen, Duc
fYear
2008
fDate
14-18 July 2008
Firstpage
47
Lastpage
52
Abstract
The phenomenon of stuck bits in SDRAMs is studied. Previous work demonstrated this effect is linear with fluence, and is due to reduction in retention time of stuck cells. Particular emphasis is placed on variations in cell structure that affect sensitivity. The exact mechanism of a stuck bit is predicted.
Keywords
DRAM chips; cell structure; high capacity SDRAM; retention time reduction; stuck bits; stuck cells; CMOS technology; Capacitance; Capacitors; Image analysis; Integrated circuit technology; MOSFETs; Radiation effects; Random access memory; SDRAM; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop, 2008 IEEE
Conference_Location
Tucson, AZ
Print_ISBN
978-1-4244-2545-7
Type
conf
DOI
10.1109/REDW.2008.15
Filename
4638613
Link To Document