Title :
Total Dose and Single Event Effect Characterization of ECL Devices
Author :
Seehra, Surinder S. ; Ditzler, Audrey J. ; Moyer, Stephen K.
Author_Institution :
Specialty Eng. Organ. of Lockheed Martin Commercial Space Syst., Newtown, PA
Abstract :
Radiation and SEE susceptibility of ECL devices manufactured by ON-semiconductor was studied. Test data shows that these devices are highly susceptible to single event transients and upsets when bombarded with heavy ions.
Keywords :
bipolar logic circuits; emitter-coupled logic; integrated circuit testing; ion beam effects; radiation hardening (electronics); ECL devices; SEE susceptibility; emitter-coupled logic; heavy ion bombardment; radiation effects; single event effect; single event transients; single event upsets; total dose radiation; Circuit testing; Design engineering; Frequency; Ion beams; Performance evaluation; Pins; Propagation delay; Semiconductor device manufacture; Semiconductor device testing; System testing;
Conference_Titel :
Radiation Effects Data Workshop, 2008 IEEE
Conference_Location :
Tucson, AZ
Print_ISBN :
978-1-4244-2545-7
DOI :
10.1109/REDW.2008.18
