Title :
On the Static Cross Section of SRAM-Based FPGAs
Author :
Manuzzato, A. ; Gerardin, S. ; Paccagnella, A. ; Sterpone, L. ; Violante, M.
Author_Institution :
Dept. of Inf. Eng., Univ. of Padova, Padova
Abstract :
We present new experimental results about the sensitivity of SRAM-based FPGAs to heavy ions. We analyze the static cross section as a function of the FPGA resource type. We also study the soft error rate as function of the accumulated total dose, and investigate the occurrence of multiple bit upsets in the configuration memory. We provide radiation data using a Xilinx Spartan-3 FPGA as test vehicle.
Keywords :
SRAM chips; field programmable gate arrays; ion beam effects; radiation hardening (electronics); SRAM-based FPGA; Xilinx Spartan-3; configuration memory; heavy ion radiation sensitivity; multiple bit upsets; soft error rate; static cross section; Alpha particles; CMOS technology; Circuits; Field programmable gate arrays; Ionizing radiation; Logic; Manufacturing; Neutrons; Single event upset; X-rays;
Conference_Titel :
Radiation Effects Data Workshop, 2008 IEEE
Conference_Location :
Tucson, AZ
Print_ISBN :
978-1-4244-2545-7
DOI :
10.1109/REDW.2008.24
