Title :
Static Upset Characteristics of the 90nm Virtex-4QV FPGAs
Author :
Swift, Gary M. ; Allen, Gregory R. ; Tseng, Chen Wei ; Carmichael, Carl ; Miller, Greg ; George, Jeffrey S.
Abstract :
Radiation Test Consortium (XRTC) single-event measurements for three of the latest generation of radiation-tolerant reconfigurable FPGAs from Xilinx (90 nm, copper- interconnected, thin-epitaxial CMOS) are presented. Results include proton and heavy-ion upset susceptibilities for unclocked memory elements, high-temperature latchup immunity and a low SEFI rate (e.g., ~one/device-century in geosynchronous orbit).
Keywords :
CMOS integrated circuits; field programmable gate arrays; integrated circuit interconnections; integrated circuit testing; ion beam effects; nanoelectronics; proton effects; radiation hardening (electronics); Virtex-4QV FPGA; Xilinx Radiation Test Consortium; copper-interconnected FPGA; field programmable gate arrays; heavy-ion upset susceptibility; high-temperature latchup immunity; proton upset susceptibility; radiation- tolerant reconfigurable FPGA; single-event measurements; size 90 nm; static upset characteristics; thin-epitaxial CMOS FPGA; unclocked memory elements; CMOS technology; Digital signal processing; Energy management; Field programmable gate arrays; Laboratories; Packaging; Propulsion; Resource management; Telephony; Testing;
Conference_Titel :
Radiation Effects Data Workshop, 2008 IEEE
Conference_Location :
Tucson, AZ
Print_ISBN :
978-1-4244-2545-7
DOI :
10.1109/REDW.2008.25
