Title :
Low Dose Rate Test Results of National Semiconductor´s ELDRS-free Bipolar Amplifier LM124 and Comparators LM139 and LM193
Author :
Kruckmeyer, Kirby ; McGee, Larry ; Brown, Bill ; Hughart, David
Author_Institution :
Nat. Semicond., Santa Clara, CA
Abstract :
It has been shown that for many types of integrated circuits, the response to total ionizing dose (TID) radiation is dependent upon the dose rate. Many bipolar products have been shown to exhibit enhanced low dose rate sensitivity (ELDRS), where they may pass TID testing at high dose rates, but fail at lower dose rates. Typically, TID testing and qualification is done under relatively high dose rate conditions. ELDRS has been a significant issue for the space community where the application dose rate is much lower than typical test conditions. National Semiconductor has made process and design changes to the classic bipolar amplifier, LM124 and comparators, LM139 and LM193, reducing their susceptibility to ELDRS, to where they could be considered "ELDRS free". High and low dose rate test data for these products are presented and compared.
Keywords :
amplifiers; bipolar analogue integrated circuits; comparators (circuits); integrated circuit testing; radiation hardening (electronics); ELDRS susceptibility; LM124 bipolar amplifier; LM139 bipolar comparator; LM193 bipolar comparator; National Semiconductor; TID radiation testing; enhanced low dose rate sensitivity; integrated circuits; total ionizing dose; Certification; Circuit testing; Fabrication; Ionizing radiation; Manufacturing processes; Process design; Semiconductor device manufacture; Semiconductor device testing; Semiconductor optical amplifiers; Telephony;
Conference_Titel :
Radiation Effects Data Workshop, 2008 IEEE
Conference_Location :
Tucson, AZ
Print_ISBN :
978-1-4244-2545-7
DOI :
10.1109/REDW.2008.27
