Title :
Evaluation of Static and Dynamic Performance of Silicon-Based Bipolar Phototransistors Under Radiation
Author :
Quadri, G. ; Gilard, O. ; Roux, J.L. ; Spezzigu, P. ; Bechou, L. ; Vanzi, M. ; Ousten, Y. ; Gibard, D.
Author_Institution :
Centre Nat. d´´Etudes Spatiales, Toulouse
Abstract :
Total dose and displacement damage irradiations were performed on two references of silicon-based bipolar phototransistors. The evolution of photocurrent and dynamic performances (rise and fall time) were analyzed. The main results are presented in this paper.
Keywords :
bipolar transistors; elemental semiconductors; phototransistors; radiation hardening (electronics); silicon; Si; bipolar phototransistors; displacement damage irradiation; dynamic performance; photocurrent; radiation hardened phototransistors; static performance; total ionizing dose irradiation; Ceramics; Glass; Laboratories; Packaging; Passivation; Phototransistors; Silicon; Telephony; Testing; Windows;
Conference_Titel :
Radiation Effects Data Workshop, 2008 IEEE
Conference_Location :
Tucson, AZ
Print_ISBN :
978-1-4244-2545-7
DOI :
10.1109/REDW.2008.30
