Title :
Negative bi-exciton binding energy in (211)B InAs/GaAs piezoelectric quantum dots
Author :
Dialynas, G.E. ; Xenogianni, C. ; Trichas, E. ; Savvidis, P.G. ; Constantinidis, G. ; Hatzopoulos, Z. ; Pelekanos, N.T.
Author_Institution :
IESL/FORTH, Heraklion
Abstract :
We report on isolated dot spectroscopy of polar (211)InAs/GaAs quantum dots grown by MBE. Exciton and biexciton peaks have been identified, revealing a negative biexciton binding energy attributed to the presence of strong piezoelectric field.
Keywords :
III-V semiconductors; biexcitons; binding energy; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoluminescence; piezoelectric semiconductors; semiconductor quantum dots; InAs-GaAs; MBE; exciton; isolated dot spectroscopy; negative biexciton binding energy; piezoelectric quantum dots; Apertures; Atom optics; Atomic force microscopy; Chromium; Excitons; Gallium arsenide; Molecular beam epitaxial growth; Quantum dots; Scanning electron microscopy; Spectroscopy;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4453514
