DocumentCode
3022628
Title
Towards thin film complete characterization using picosecond ultrasonics
Author
Mante, P.A. ; Devos, A. ; Robillard, J.F.
Author_Institution
Dept. ISEN, Inst. d´´Electron. et de Microelectron. du Nord, Lille
fYear
2008
fDate
2-5 Nov. 2008
Firstpage
1203
Lastpage
1206
Abstract
Picosecond ultrasonics is an ultrafast time-resolved technique which offers an unique way of measuring elastic properties in thin films and multi-layers. In the conventional setup only longitudinal waves can be excited by the laser. But in order to have a complete characterization, we need in-plane informations. Here, we show that using a nanostructured aluminum film as a transducer, we can excite longitudinal and high-frequency surface waves using a standard setup. By measuring longitudinal and surface velocities, we can deduce the Young modulus and the Poisson ratio which complete the characterization of any isotropic materials. Here we applied this technique to AlN, SiO2 and Si3N4.
Keywords
Poisson ratio; Young´s modulus; aluminium compounds; elastic moduli measurement; high-speed optical techniques; measurement by laser beam; multilayers; nanostructured materials; photoacoustic effect; silicon compounds; thin films; ultrasonic measurement; ultrasonic transducers; ultrasonic velocity measurement; AlN; Poisson ratio; Si3N4; SiO2; Young modulus; acoustic wave transducer; elastic property measurement; femtosecond laser pulse; high-frequency surface wave; in-plane information; isotropic material; longitudinal velocity measurement; multilayer; nanostructured aluminum film; picosecond ultrasonics; surface velocity measurement; thin film; ultrafast time-resolved technique; Acoustic measurements; Acoustic transducers; Acoustic waves; Laser excitation; Substrates; Surface acoustic waves; Transistors; Ultrasonic variables measurement; Vibrations; Young´s modulus; Poisson ratio; Young´s modulus; silicon compounds; surface acoustic waves; thin films; ultrasonics;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics Symposium, 2008. IUS 2008. IEEE
Conference_Location
Beijing
Print_ISBN
978-1-4244-2428-3
Electronic_ISBN
978-1-4244-2480-1
Type
conf
DOI
10.1109/ULTSYM.2008.0290
Filename
4803456
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