InAs HEMT for terahertz applications

Author

Chang, Edward Yi

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2012

fDate

19-21 Sept. 2012

Abstract

InP based high indium concentration high-electron mobility transistors (HEMTs) are an attractive transistor technology for millimeter-wave and terahertz applications. Ultra-short gate length (Lg) InAlAs/InGaAs HEMTs on InP substrate has been fabricated and demonstrated excellent RF-performance over the past decade. Higher electron mobility and drift velocity can be realized by reducing of Lg and increasing the indium content in the InxGa1-xAs channel. Due to the high electron mobility, velocity and large conduction band offset in InAs, InAs-channel HEMT is promising for high speed and low power logic applications. In this talk, InAs/InxGa1-xAs channel InP HEMTs are fabricated and evaluated for high-frequency applications.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; low-power electronics; millimetre wave field effect transistors; terahertz wave devices; InAlAs-InGaAs; InP; RF-performance; channel HEMT; conduction band offset; drift velocity; high indium concentration high-electron mobility transistor; high speed logic application; high-frequency application; low power logic application; millimeter-wave application; terahertz application; transistor technology; ultra-short gate length; Current density; Electron mobility; HEMTs; Indium; Indium phosphide; Logic gates; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on

Conference_Location

Kuala Lumpur

Print_ISBN

978-1-4673-2395-6

Electronic_ISBN

978-1-4673-2394-9

Type

conf

DOI

10.1109/SMElec.2012.6417072

Filename

6417072