DocumentCode :
3022909
Title :
Calculation of electronic structure and photoelectric properties of rutile VO2
Author :
Song, Tingting ; Cheng, Ji
Author_Institution :
Sch. of Phys. & Electron. Inf., China West Normal Univ., Nanchong, China
fYear :
2011
fDate :
26-28 July 2011
Firstpage :
2422
Lastpage :
2425
Abstract :
The electronic structure and photoelectric properties of VO2, such as dielectric constant, absorption constant, refractive index, and conductance were calculated by using the method of SCC-DV-X-ECM. A broad band on top of which located the fermi energy level was formed by the combination of the 2p energy band of O and 3d energy band of V. The energy levels under the Fermi Energy Level were occupied by electrons, most of which made contribution to the ability of conduction. Therefore, the VO2 showed metal features. There were two peaks in the figure of the imaginary part of dielectric constant versus the frequency of incident light: The peak around 0.8 eV was mainly stimulated by electronic intraband transition, while the peak between 4-7 eV was mainly stimulated by electronic band-to-band transition. The calculated results of refractive index and extinction coefficient consist with the experiment results.
Keywords :
Fermi level; band structure; electronic structure; photodielectric effect; refractive index; vanadium compounds; 2p energy band; 3d energy band; SCC-DV-X-ECM method; VO2; absorption constant; dielectric constant; electron volt energy 4 eV to 7 eV; electronic band-to-band transition; electronic intraband transition; electronic structure calculation; extinction coefficient; fermi energy level; incident light frequency; photoelectric property; refractive index; rutile structure; self consistent of charge-discrete variation-embedded cluster model method; Absorption; Crystals; Dielectric constant; Energy states; Extinction coefficients; Optical reflection; Refractive index; SCC-DV-X α -ECM; VO2; electronic structure photoelectric properties;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Multimedia Technology (ICMT), 2011 International Conference on
Conference_Location :
Hangzhou
Print_ISBN :
978-1-61284-771-9
Type :
conf
DOI :
10.1109/ICMT.2011.6001725
Filename :
6001725
Link To Document :
بازگشت