Title :
Multiple Wavelength Emission From Semipolar InGaN/GaN Quantum Wells Selectively Grown by MOCVD
Author :
Yu, Hongbo ; Jung, Taeil ; Lee, L.K. ; Ku, P.C.
Author_Institution :
Univ. of Michigan, Ann Arbor
Abstract :
Multiple wavelength emission is experimentally observed from semipolar InGaN/GaN quantum wells selectively grown by MOCVD. Selective growth rates on different mask opening areas result in a multiple wavelength emission from the same wafer.
Keywords :
III-V semiconductors; MOCVD; gallium compounds; indium compounds; photoluminescence; semiconductor growth; semiconductor quantum wells; InGaN-GaN; MOCVD; mask opening areas; multiple wavelength emission; selective growth rates; semipolar quantum wells; Epitaxial growth; Gallium nitride; Light emitting diodes; MOCVD; Monolithic integrated circuits; Quantum computing; Quantum well devices; Scanning electron microscopy; Silicon compounds; Temperature;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4453550
