DocumentCode
3023065
Title
Efficient point defect engineered si light-emitting diode at 1.218 μm
Author
Bao, Jiming ; Tabbal, Malek ; Kim, Taegon ; Charnvanichborikarn, Supakit ; Williams, James S. ; Aziz, Michael J. ; Capasso, Federico
Author_Institution
Harvard Univ. Cambridge, Cambridge
fYear
2007
fDate
6-11 May 2007
Firstpage
1
Lastpage
2
Abstract
We have demonstrated a Si LED with an internal quantum efficiency ˜ 10 % using a novel approach to enhance light emission based on point defect engineering, which uses state-of- the art technology.
Keywords
elemental semiconductors; light emitting diodes; point defects; silicon; LED; Si; internal quantum efficiency; light-emitting diode; point defect engineering; wavelength 1.218 micron; Electroluminescent devices; Light emitting diodes; Luminescence; Optical pulses; Particle beam optics; Physics; Radiative recombination; Space vector pulse width modulation; Stimulated emission; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-834-6
Type
conf
DOI
10.1109/CLEO.2007.4453553
Filename
4453553
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