Title :
Temperature compensation of thin AlN film resonators utilizing the lowest order symmetric lamb mode
Author :
Wingqvist ; Arapan, L. ; Yantchev, V. ; Katardjiev, I.
Author_Institution :
Dept. Solid State Electron., Uppsala Univ., Uppsala
Abstract :
Micromachined thin film plate acoustic wave resonators (FPAR) utilizing the lowest order symmetric Lamb wave (S0) propagating in highly textured 2 mum thick Aluminum Nitride (AlN) membranes have been successfully demonstrated. However, a notable drawback of the proposed devices is their non-zero temperature coefficient of frequency (TCF) which lies in the range -20 ppm/K to -25 ppm/K. In this work temperature compensation of thin AlN film Lamb wave resonators is studied and demonstrated. Temperature compensation, while retaining at the same time the device electromechanical coupling, is experimentally demonstrated. The zero TCF Lamb wave resonators are fabricated onto composite AlN/SiO2 membranes. Q factors of around 1400 have been measured at a frequency of around 755 MHz.
Keywords :
III-V semiconductors; aluminium compounds; compensation; micromachining; piezoelectric thin films; surface acoustic wave resonators; AlN; Lamb wave resonators; Q factors; device electromechanical coupling; lowest order symmetric Lamb mode; micromachining; nonzero temperature coefficient of frequency; temperature compensation; thin film plate acoustic wave resonators; Acoustic reflection; Acoustic waves; Biomembranes; Frequency; Gratings; Surface acoustic waves; System-on-a-chip; Temperature distribution; Topology; Transistors; AlN; Compensation; Lamb wave; Microacoustics; Resonator; TCF;
Conference_Titel :
Ultrasonics Symposium, 2008. IUS 2008. IEEE
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2428-3
Electronic_ISBN :
978-1-4244-2480-1
DOI :
10.1109/ULTSYM.2008.0291
