• DocumentCode
    3023152
  • Title

    Properties of amorphous carbon thin films with nitrogen incorporation by Aerosol-assisted CVD

  • Author

    Fadzilah, A.N. ; Dayana, K. ; Noor, Uzer Mohd ; Rusop, M.

  • Author_Institution
    Nano-Electron. Centre (NET), Univ. Teknol. Mara (UiTM), Shah Alam, Malaysia
  • fYear
    2012
  • fDate
    19-21 Sept. 2012
  • Firstpage
    52
  • Lastpage
    56
  • Abstract
    In this experiment, a new deposition technique was employed to deposit and to dope the amorphous carbon (a-C). Nitrogen doped amorphous carbon (a-C: N) thin films were prepared by Aerosol-assisted Chemical Vapor Deposition (AACVD) by varying the deposition time from 15 minutes to 60 minutes. The electrical and optical properties of deposited a-C: N thin films were characterized by current-voltage Solar Simulator system and UV-Vis-NIR spectroscope. Electrical characterization results in ohmic behavior with the optimum conductivity were indicated at sample deposited for 15 minutes. At visible range, the transmittance is high (above 80%) for sample deposited at 15 minutes and possess lower transmittance (60% to 85%) when deposition time increase up to 45 minutes. The absorption coefficient, α for a-C: N is reported to be ~x105 cm-1. From the atomic force microscope characterization, surface morphology and roughness value was measured.
  • Keywords
    amorphous semiconductors; carbon; chemical vapour deposition; nitrogen; semiconductor thin films; AACVD; C; UV-Vis-NIR spectroscope; absorption coefficient; aerosol-assisted CVD; amorphous carbon thin film; atomic force microscope characterization; chemical vapor deposition; current-voltage solar simulator system; electrical property; nitrogen doped amorphous carbon; ohmic behavior; optical property; roughness value; surface morphology; Carbon; Conductivity; Nitrogen; Optical films; Optical surface waves; Surface treatment; Aerosol-assisted CVD; Amorphous carbon; Electrical properties; Nitrogen doped; Optical properties; Structural properties;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on
  • Conference_Location
    Kuala Lumpur
  • Print_ISBN
    978-1-4673-2395-6
  • Electronic_ISBN
    978-1-4673-2394-9
  • Type

    conf

  • DOI
    10.1109/SMElec.2012.6417089
  • Filename
    6417089