DocumentCode
3023262
Title
Influence of electron-electron scattering on spin relaxation length in single and bilayer graphene
Author
Bishnoi, B. ; Hiranandani, D. ; Salimath, Arunkumar ; Nandal, V. ; Ghosh, Bablu
fYear
2012
fDate
19-21 Sept. 2012
Firstpage
69
Lastpage
72
Abstract
Theoretical study of influence of electron-electron scattering on spin relaxation length in single layer graphene (SLG) and bilayer graphene (BLG) is done using ensemble semi classical Monte Carlo simulation. The comparison is made by including electron-electron interactions with electron-phonon interactions (acoustic and optical). The D´yakonov-Perel (DP) and Elliot-Yafet (EY) spin relaxation mechanisms are utilized in the Monte Carlo routines. The results are simulated with varying temperatures to show that e-e scattering holds significant importance as a scattering mechanism at low temperatures and gradually loses its importance in as we reach room temperature and above. We report highly contrasting effect of e-e scattering on SLG and BLG.
Keywords
Monte Carlo methods; electron spin-lattice relaxation; electron-electron scattering; electron-phonon interactions; graphene; C; Dyakonov-Perel spin relaxation; Elliot-Yafet spin relaxation; bilayer graphene; electron-electron interactions; electron-electron scattering; electron-phonon interactions; semiclassical Monte Carlo simulation; single layer graphene; temperature 293 K to 298 K; Carbon; Effective mass; Graphene; Jacobian matrices; Magnetoelectronics; Monte Carlo methods; Scattering; Monte Carlo Simulation; Scattering; Single Layer and Bilayer Graphene; Spin Relaxation;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on
Conference_Location
Kuala Lumpur
Print_ISBN
978-1-4673-2395-6
Electronic_ISBN
978-1-4673-2394-9
Type
conf
DOI
10.1109/SMElec.2012.6417093
Filename
6417093
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