Title :
Evidence of the lateral collection significance in small CMOS photodiodes
Author :
Blanco-Filgueira, B. ; López, P. ; Döge, J. ; Suárez, M. ; Roldán, J.B.
Author_Institution :
Centro de Inv. en Tec. de la Inf. (CITIUS), Univ. of Santiago de Compostela, Santiago de Compostela, Spain
Abstract :
The lateral collection capacity of small CMOS photodiodes, scanned with a point source illumination, is studied. The mathematical solution of the physical equations is compared to experimental measurements in a standard UMC 90nm technology. They show close agreement and reveal that the lateral collection through the sidewalls of the depletion region becomes a significant component of the overall photocurrent. The same conclusion is achieved through device simulations under uniform illumination using ATLAS.
Keywords :
CMOS integrated circuits; photoconductivity; photodiodes; ATLAS; CMOS photodiode; depletion region; device simulation; lateral collection significance; mathematical solution; photocurrent; physical equation; point source illumination; size 90 nm; CMOS integrated circuits; Current density; Equations; Lighting; Mathematical model; P-n junctions; Photodiodes;
Conference_Titel :
Circuits and Systems (ISCAS), 2012 IEEE International Symposium on
Conference_Location :
Seoul
Print_ISBN :
978-1-4673-0218-0
DOI :
10.1109/ISCAS.2012.6271976
