Properties of ZnO/MgO multilayer films as insulating layer prepared by sol-gel method

Author

Habibah, Z. ; Arshad, A.N. ; Wahid, M.H. ; Ismail, L.N. ; Bakar, Rohani Abu ; Mamat, M.H. ; Rusop, M.

Author_Institution

Nano-Electron. Centre (NET), Univ. Teknol. MARA, Shah Alam, Malaysia

fYear

2012

fDate

19-21 Sept. 2012

Firstpage

73

Lastpage

77

Abstract

This work present the synthesis of ZnO/MgO multilayer films using spin coating technique with different MgO layer thickness which are 171nm, 238nm and 506nm. The influence of MgO thickness on the insulating layer properties was investigated. The best prepared insulating layer to be used as dielectrics was found to be ZnO/MgO film deposited using 238 nm MgO layer. This is due to it uniformity, low porosity, high resistivity (28.7 × 10⁵ Ω.cm) and low leakage current (below 1E-7). The particle produced also in nanometer dimension which in the range of 42 to 84 nm that will lead to the improvement in the device characteristic.

Keywords

dielectric materials; insulating materials; leakage currents; magnesium compounds; multilayers; sol-gel processing; spin coating; zinc compounds; MgO layer thickness; ZnO-MgO; dielectrics; insulating layer property; leakage current; multilayer film; nanometer dimension; porosity; size 171 nm; size 238 nm; size 506 nm; sol-gel method; spin coating; Conductivity; Leakage current; Nonhomogeneous media; Optical films; Surface morphology; Zinc oxide; ZnO/MgO; dielectric; insulating layer; leakage current; sol-gel;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on

Conference_Location

Kuala Lumpur

Print_ISBN

978-1-4673-2395-6

Electronic_ISBN

978-1-4673-2394-9

Type

conf

DOI

10.1109/SMElec.2012.6417094

Filename

6417094