DocumentCode :
3023359
Title :
Electrical properties of ZnO/TiO2 nanocomposite film deposited by simultaneous Radio-Frequency Magnetron sputtering
Author :
Saurdi, I. ; Mamat, M.H. ; Abdullah, Mohd Harun ; Musa, M.Z. ; Rusop, M.
Author_Institution :
NANO - Electron. Centre (NET), Univ. Teknol. MARA (UiTM), Shah Alam, Malaysia
fYear :
2012
fDate :
19-21 Sept. 2012
Firstpage :
82
Lastpage :
85
Abstract :
In this work, the ZnO/TiO2 nanocomposite thin films were prepared by simultaneous Radio-Frequency Magnetron sputtering of ZnO and TiO2 targets on glass substrates at different deposition times in the range of 30-75 minutes that increases the film thickness. The electrical and surface morphology were characterized by I-V measurement and atomic force microscopy (AFM) measurement respectively. The electrical characteristics indicate that the conductivity increases as the thickness increase due to the improvement in surface contact between particles and photocatalytic activity. High conductivity at 1.67×10-4 S/cm and lowest resistivity about 5.14×104 Ω/cm have been obtained for 75 minutes deposition time. Atomic force microscopy (AFM) showed particle size of ZnO/TIO2 thin films increases from 26nm to 50nm with an increasing in deposition time.
Keywords :
atomic force microscopy; catalysis; electric current measurement; electric properties; nanocomposites; particle size; photochemistry; semiconductor thin films; sputtering; tin compounds; voltage measurement; wide band gap semiconductors; zinc compounds; AFM measurement; I-V measurement; TiO2; ZnO; atomic force microscopy measurement; electrical characteristics; electrical morphology; electrical property; film thickness; glass substrates; lowest resistivity; nanocomposite film deposition; nanocomposite thin films; particle size; photocatalytic activity; radio-frequency magnetron sputtering; surface contact; surface morphology; Conductivity; Magnetic films; Radio frequency; Sputtering; Surface treatment; Zinc oxide; Deposition time; Sputtering properties; Titanium oxide; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4673-2395-6
Electronic_ISBN :
978-1-4673-2394-9
Type :
conf
DOI :
10.1109/SMElec.2012.6417096
Filename :
6417096
Link To Document :
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