Scattering effects in Silicon Nanowire Fin field effect transistor

The velocity of an electron traveling from the source to drain of a field effect transistor can be much degraded by scattering effects. The scattering effects eventually become dominant as the devices are scaled down to the nanometer regime. In this paper, we propose a current-voltage (I-V) model for a two-dimensional Silicon Nanowire FinFET (SNWFinFET) which considers the scattering mechanism effects as well. Based on our simulated model, a notable scattering effect is observed and the I-V characteristics are in good agreement with experimental data. To evaluate the model, three parameters, temperature, channel length and drain voltage, were varied; the variation of each parameter has a significant effect on the I-V characteristics. These simulation results provide insights helpful for implementing SNWFinFETs as future devices, especially for high speed applications.