• DocumentCode
    3023408
  • Title

    Process compensated CMOS temperature sensor for microprocessor application

  • Author

    Jeong, Yaesuk ; Ayazi, Farrokh

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
  • fYear
    2012
  • fDate
    20-23 May 2012
  • Firstpage
    3118
  • Lastpage
    3121
  • Abstract
    This paper presents the design and implementation of a process compensated CMOS temperature sensor that does not require any BJTs. CTAT and PTAT sensors that are based on temperature-dependent threshold voltage (VTH) are designed to have same process variation and outputs are subtracted to suppress the process spread. Proposed design is fabricated in a TSMC 0.18um 2P6M process and measured results show less than an -1.8°C to +0.9°C error over -40°C to 85°C after 1-point calibration. The noise level is less than 100uV/√Hz, which is equivalent to 0.043°C and overall power consumption is 478uW.
  • Keywords
    CMOS integrated circuits; calibration; low-power electronics; microprocessor chips; temperature sensors; 1-point calibration; CMOS temperature sensor; CTAT sensors; PTAT sensors; TSMC 2P6M process; microprocessor application; power 478 muW; power consumption; process compensation; size 0.18 mum; temperature-dependent threshold voltage; Abstracts;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (ISCAS), 2012 IEEE International Symposium on
  • Conference_Location
    Seoul
  • ISSN
    0271-4302
  • Print_ISBN
    978-1-4673-0218-0
  • Type

    conf

  • DOI
    10.1109/ISCAS.2012.6271981
  • Filename
    6271981