DocumentCode
3023408
Title
Process compensated CMOS temperature sensor for microprocessor application
Author
Jeong, Yaesuk ; Ayazi, Farrokh
Author_Institution
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear
2012
fDate
20-23 May 2012
Firstpage
3118
Lastpage
3121
Abstract
This paper presents the design and implementation of a process compensated CMOS temperature sensor that does not require any BJTs. CTAT and PTAT sensors that are based on temperature-dependent threshold voltage (VTH) are designed to have same process variation and outputs are subtracted to suppress the process spread. Proposed design is fabricated in a TSMC 0.18um 2P6M process and measured results show less than an -1.8°C to +0.9°C error over -40°C to 85°C after 1-point calibration. The noise level is less than 100uV/√Hz, which is equivalent to 0.043°C and overall power consumption is 478uW.
Keywords
CMOS integrated circuits; calibration; low-power electronics; microprocessor chips; temperature sensors; 1-point calibration; CMOS temperature sensor; CTAT sensors; PTAT sensors; TSMC 2P6M process; microprocessor application; power 478 muW; power consumption; process compensation; size 0.18 mum; temperature-dependent threshold voltage; Abstracts;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (ISCAS), 2012 IEEE International Symposium on
Conference_Location
Seoul
ISSN
0271-4302
Print_ISBN
978-1-4673-0218-0
Type
conf
DOI
10.1109/ISCAS.2012.6271981
Filename
6271981
Link To Document