The suppresion of switching in InP HBTs

Author

Driad, R. ; McAlister, S.P. ; McKinnon, W.R. ; Renaud, A.

Author_Institution

Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada

fYear

1997

fDate

11-15 May 1997

Firstpage

388

Lastpage

391

Abstract

In this paper we examine the dc characteristics of InP/InGaAs double heterostructure bipolar transistors with differing collector designs. We show how the switching characteristics of devices with abrupt undoped InGaAs/InP heterojunctions in the collector, although providing an interesting device physics, can almost be eliminated by using dipole doping at the collector heterojunction. The high frequency performance is also improved with the dipole doping

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; millimetre wave bipolar transistors; semiconductor doping; switching; tunnelling; InP; InP-InGaAs; InP/InGaAs double heterostructure bipolar transistors; abrupt undoped InGaAs/InP heterojunctions; collector designs; collector heterojunction; common-base characteristics; common-emitter characteristics; dc characteristics; dipole doping; high frequency performance; switching characteristics; switching suppression; temperature dependence; tunneling; Bipolar transistors; Doping; Electrons; Energy barrier; Epitaxial layers; Frequency; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Physics;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600175

Filename

600175