Title :
The suppresion of switching in InP HBTs
Author :
Driad, R. ; McAlister, S.P. ; McKinnon, W.R. ; Renaud, A.
Author_Institution :
Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada
Abstract :
In this paper we examine the dc characteristics of InP/InGaAs double heterostructure bipolar transistors with differing collector designs. We show how the switching characteristics of devices with abrupt undoped InGaAs/InP heterojunctions in the collector, although providing an interesting device physics, can almost be eliminated by using dipole doping at the collector heterojunction. The high frequency performance is also improved with the dipole doping
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; millimetre wave bipolar transistors; semiconductor doping; switching; tunnelling; InP; InP-InGaAs; InP/InGaAs double heterostructure bipolar transistors; abrupt undoped InGaAs/InP heterojunctions; collector designs; collector heterojunction; common-base characteristics; common-emitter characteristics; dc characteristics; dipole doping; high frequency performance; switching characteristics; switching suppression; temperature dependence; tunneling; Bipolar transistors; Doping; Electrons; Energy barrier; Epitaxial layers; Frequency; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Physics;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600175
