Design of a curvature-corrected bandgap reference with 7.5ppm/C temperature coefficient in 0.35µm CMOS process

Author

Basyurt, Pinar Basak ; Aksin, Devrim Yilmaz

Author_Institution

Sch. of Electr. & Electron. Eng., Istanbul Tech. Univ., Istanbul, Turkey

fYear

2012

fDate

20-23 May 2012

Firstpage

3142

Lastpage

3145

Abstract

This paper presents the design of high-precision curvature-corrected bandgap voltage reference circuit realized in 0.35μm CMOS technology. The circuit generates an output voltage of 500mV with temperature coefficient of 7.5ppm/C over a temperature range of -30C to 120C, with a power supply rejection ratio of 58dB at 100Hz, and an rms output noise of 5.33μV integrated from 0.1Hz to 10Hz. The circuit operates down to 1.8 volts with a line sensitivity of 0.12%/V. The design consumes 9.74μA of supply current, and occupies an area of 0.075mm².

Keywords

CMOS integrated circuits; integrated circuit design; CMOS; current 9.74 muA; curvature-corrected bandgap reference design; frequency 0.1 Hz to 10 Hz; frequency 100 Hz; high-precision curvature-corrected bandgap voltage reference circuit design; power supply rejection ratio; size 0.35 mum; temperature -30 C to 120 C; voltage 1.8 V; voltage 5.33 muV; voltage 500 mV; Bipolar transistors; CMOS integrated circuits; Photonic band gap; Resistors; Temperature dependence; Temperature distribution; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (ISCAS), 2012 IEEE International Symposium on

Conference_Location

Seoul

ISSN

0271-4302

Print_ISBN

978-1-4673-0218-0

Type

conf

DOI

10.1109/ISCAS.2012.6271988

Filename

6271988