Title :
A compact resistorless 1.5-V CMOS current reference with 16.5-ppm/°C temperature coefficient
Author :
Quemada, Carlos ; Cochran, Travis L. ; Ha, Dong Sam
Author_Institution :
Bradley Dept. of Electr. & Comput. Eng., Virginia Tech, Blacksburg, VA, USA
Abstract :
In this paper a novel temperature compensated current reference with modified PMOS cascode architecture is presented. Using PMOS transistors and substituting the typical current source resistor with a diode connected NMOS transistor, better temperature compensation is achieved avoiding the use of large valued resistors. This architecture, designed in the IBM 0.18 μm CMOS 7RF SOI technology, achieves a 16.5 ppm/°C temperature coefficient over range of 20 °C to 130 °C together with reduced power consumption, 38.7 μW at 1.5 V, and silicon area, 130μm2.
Keywords :
CMOS integrated circuits; compensation; reference circuits; silicon-on-insulator; CMOS 7RF SOI technology; PMOS cascode architecture; PMOS transistor; compact resistorless CMOS current reference; diode connected NMOS transistor; power 38.7 muW; size 0.18 mum; temperature 20 C to 130 C; temperature coefficient; temperature compensation; voltage 1.5 V; CMOS integrated circuits; CMOS technology; MOSFETs; Resistors; Silicon; Temperature distribution;
Conference_Titel :
Circuits and Systems (ISCAS), 2012 IEEE International Symposium on
Conference_Location :
Seoul
Print_ISBN :
978-1-4673-0218-0
DOI :
10.1109/ISCAS.2012.6271989