DocumentCode :
3023648
Title :
Formation of Copper oxide thin films from RF sputtered Cu thin film by ultra high pure boiled water
Author :
Shanmugan, S. ; Mutharasu, D.
Author_Institution :
Nano Optoelectron. Res. Lab., Univ. Sains Malaysia (USM), Minden, Malaysia
fYear :
2012
fDate :
19-21 Sept. 2012
Firstpage :
132
Lastpage :
136
Abstract :
Copper oxide thin films were synthesized from rf sputtered Cu thin film using ultra high pure hot water. X ray diffraction studies confirmed the formation of mixed phases (Cubic Cu2O and Monolithic CuO) after processing for 3 hrs duration. Transmittance studies also revealed the conversion of Cu into Copper oxide by showing high transmittance for processed film. The calculated band gap (2.6-2.69 eV) is higher than the bulk copper oxides (2.14 eV). PL spectra showed three dominant peaks at 390nm, 522nm and 680 nm related to nano structured Cu2O. Raman spectra also confirmed the formation of nano crystals of Copper oxides.
Keywords :
copper compounds; energy gap; semiconductor thin films; sputter deposition; Cu thin film; Cu2O; CuO; PL spectra; RF sputtering; Raman spectra; X ray diffraction; band gap; copper oxide thin film; cubic Cu2O; electron volt energy 2.14 eV; electron volt energy 2.6 eV to 2.69 eV; monolithic CuO; nanocrystal; nanostructured Cu2O; ultrahigh pure boiled water; Copper; Optical films; Oxidation; Photonic band gap; Solids; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4673-2395-6
Electronic_ISBN :
978-1-4673-2394-9
Type :
conf
DOI :
10.1109/SMElec.2012.6417108
Filename :
6417108
Link To Document :
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