Title :
Observation of Long-Lived Screening in Low-Temperature-Grown GaAs Photoconductive Switches
Author :
Loata, G. ; Löffler, T. ; Thomson, M.D. ; Lisauskas, A. ; Roskos, H.G.
Author_Institution :
Johann Wolfgang Goethe-Univ., Frankfurt
Abstract :
A subgroup of photoexcited carriers in biased few-mum-sized LT-GaAs switches is shown to recombine on a time scale of nanoseconds. This can induce field screening amounting to tens of percent of the applied field.
Keywords :
III-V semiconductors; gallium arsenide; optoelectronic devices; photoconducting materials; photoconducting switches; photoconductive switches; photoexcited carriers; Charge carrier processes; Charge carriers; Electron traps; Gallium arsenide; Laser beams; Laser excitation; Optical switches; Photoconducting materials; Photoconductivity; Ultrafast optics;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4453583
