Numerical modeling and design of Pnp InAlAs-InGaAs heterojunction bipolar transistors

Author

Datta, S. ; Shi, S. ; Roenker, K.P. ; Cahay, M.M. ; Stanchina, William E.

Author_Institution

Dept. of Electr. & Comput. Eng., Cincinnati Univ., OH, USA

fYear

1997

fDate

11-15 May 1997

Firstpage

392

Lastpage

395

Abstract

Pnp InAlAs/InGaAs heterojunction bipolar transistors have been studied using a two dimensional, numerical approach based on a commercial simulator. Initial simulation results have shown good agreement with the available experimental data. This paper examines the effects of the epitaxial layer parameters and optimization of the transistor´s multi-layer epitaxial structure. Due to the small hole diffusion length, base widths approaching 30 nm are needed to achieve significant current gain (>100) and large f_τ (>10 GHz). The high majority carrier electron mobility in the base allows the base resistance to remain small as the base width and doping are reduced so that an f_τ greater than 20 GHz and an f_max greater than 30 GHz are possible

Keywords

III-V semiconductors; aluminium compounds; carrier lifetime; electron mobility; gallium arsenide; heterojunction bipolar transistors; hole mobility; indium compounds; microwave bipolar transistors; semiconductor device models; semiconductor doping; semiconductor epitaxial layers; 10 to 20 GHz; 30 GHz; 30 nm; InAlAs-InGaAs; InP; Pnp InAlAs/InGaAs heterojunction bipolar transistors; base resistance; base width; base widths; collector doping; commercial simulator; current gain; cutoff frequency; design; doping reduction; epitaxial layer parameters; frequency of oscillation; hole diffusion length; majority carrier electron mobility; multi-layer epitaxial structure optimization; numerical modeling; two dimensional numerical approach; Computational modeling; Current density; Doping; Effective mass; Frequency; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Numerical models; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600176

Filename

600176