DocumentCode :
3023797
Title :
Effect of temperature treatment on the properties of ZnO nanoparticle-Bi2O3-Mn2O3 varistor ceramics
Author :
Sendi, R.K. ; Mahmud, S.
Author_Institution :
Nano Optoelectron. Res. (NOR) Lab., Univ. Sains Malaysia, Minden, Malaysia
fYear :
2012
fDate :
19-21 Sept. 2012
Firstpage :
163
Lastpage :
167
Abstract :
In the current study, 20 nm zinc oxide nanoparticles were used to make high-density ZnO discs doped with Bi2O3 and Mn2O3 via the conventional ceramic processing method. Different sintering temperatures were found to have significant impacts on the ZnO discs, especially on enhancing grain growth even at a low sintering temperature of only 980°C. The strong solid-state reaction during sintering may be attributed to the high surface area of the 20 nm ZnO nanoparticles that promoted a strong surface reaction even at low sintering temperatures. Moreover, the sintering process also improved the grain crystallinity, as shown in the lowering of the intrinsic compressive stress based on the X-ray diffraction lattice constant and full-wave half-maximum data. The sintering temperatures also significantly influenced the electrical properties of the doped ZnO discs with a marked drop in the breakdown voltage from 335 V (sample at 980°C) to 130 V (sample at 1220°C). The resistivity also experienced a dramatic drop from 303.5 kΩ.cm (sample at 980°C) to 180.7 kΩ.cm (sample at 1220°C). The observed shift in the energy band-gap from a higher to a lower value may be attributed to the conversion of compressive stress to tensile stress with increasing sintering temperature. Therefore, the sintering process can be used as a new technique for controlling the breakdown voltage of doped ZnO discs made from ZnO nanoparticles with improved structural and optical properties.
Keywords :
X-ray diffraction; bismuth compounds; ceramics; compressive strength; energy gap; heat treatment; lattice constants; manganese compounds; nanoparticles; semiconductor device breakdown; semiconductor doping; sintering; surface chemistry; tensile strength; varistors; zinc compounds; Bi2O3; Mn2O3; X-ray diffraction lattice constant; ZnO; breakdown voltage; conventional ceramic processing method; doped discs; dramatic drop; electrical property; energy band-gap; full-wave half-maximum data; grain crystallinity; grain growth; high-density discs; intrinsic compressive stress; optical property; sintering process; sintering temperatures; solid-state reaction; structural property; surface reaction; temperature treatment effect; tensile stress; varistor ceramics; zinc oxide nanoparticles; Ceramics; Grain boundaries; Lattices; Photonic band gap; Temperature; Varistors; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4673-2395-6
Electronic_ISBN :
978-1-4673-2394-9
Type :
conf
DOI :
10.1109/SMElec.2012.6417115
Filename :
6417115
Link To Document :
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