DocumentCode :
3023965
Title :
Surface Modified Nanoporous Materials for Hydrogen Sensing
Author :
Kanungo, Jayita ; Basu, Palash Kumar ; Basu, Sukumar ; Spetz, Anita Lloyd
Author_Institution :
Dept. of Electron. & Telecommun. Eng., Jadavpur Univ., Kolkata, India
fYear :
2010
fDate :
18-25 July 2010
Firstpage :
124
Lastpage :
129
Abstract :
Nanoporous silicon and nanoporous ZnO were prepared by the electrochemical anodization of crystalline Si and Zn substrate. To passivate the defect states (arise due to the nano structure of the PS and ZnO thin film and introduce a barrier for the current conduction) and to improve the gas sensitivity the porous silicon and nano crystalline ZnO surfaces were modified by PdCl2 solution. The Pd modified sensors having Pd-Ag (26%)/PS/Si/Al (MIS) and Pd-Ag (26%)/ZnO/Zn (MIM) device structures were investigated in different hydrogen concentrations (0.01, 0.05, 0.1, 0.5 and 1.0%) regarding optimum biasing voltage and temperature. Both the sensor showed superior performance in terms of operating temperature, response magnitude, response time and recovery time.
Keywords :
II-VI semiconductors; anodisation; defect states; electrochemical electrodes; elemental semiconductors; gas sensors; hydrogen; nanoporous materials; passivation; porous semiconductors; silicon; wide band gap semiconductors; zinc compounds; H2; Si; ZnO; crystalline Si; defect states; electrochemical anodization; gas sensitivity; hydrogen sensor; nano crystalline surfaces; passivation; porous silicon; surface modified nanoporous materials; Nanobioscience; Nitrogen; Silicon; Temperature sensors; Zinc oxide; Nanocrystalline; Nanoporous; Pd modification; Silicon; Zinc Oxide; hydrogen sensor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sensor Device Technologies and Applications (SENSORDEVICES), 2010 First International Conference on
Conference_Location :
Venice
Print_ISBN :
978-1-4244-7474-5
Type :
conf
DOI :
10.1109/SENSORDEVICES.2010.30
Filename :
5632122
Link To Document :
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