Surface Modified Nanoporous Materials for Hydrogen Sensing

Author

Kanungo, Jayita ; Basu, Palash Kumar ; Basu, Sukumar ; Spetz, Anita Lloyd

Author_Institution

Dept. of Electron. & Telecommun. Eng., Jadavpur Univ., Kolkata, India

fYear

2010

fDate

18-25 July 2010

Firstpage

124

Lastpage

129

Abstract

Nanoporous silicon and nanoporous ZnO were prepared by the electrochemical anodization of crystalline Si and Zn substrate. To passivate the defect states (arise due to the nano structure of the PS and ZnO thin film and introduce a barrier for the current conduction) and to improve the gas sensitivity the porous silicon and nano crystalline ZnO surfaces were modified by PdCl₂ solution. The Pd modified sensors having Pd-Ag (26%)/PS/Si/Al (MIS) and Pd-Ag (26%)/ZnO/Zn (MIM) device structures were investigated in different hydrogen concentrations (0.01, 0.05, 0.1, 0.5 and 1.0%) regarding optimum biasing voltage and temperature. Both the sensor showed superior performance in terms of operating temperature, response magnitude, response time and recovery time.

Keywords

II-VI semiconductors; anodisation; defect states; electrochemical electrodes; elemental semiconductors; gas sensors; hydrogen; nanoporous materials; passivation; porous semiconductors; silicon; wide band gap semiconductors; zinc compounds; H₂; Si; ZnO; crystalline Si; defect states; electrochemical anodization; gas sensitivity; hydrogen sensor; nano crystalline surfaces; passivation; porous silicon; surface modified nanoporous materials; Nanobioscience; Nitrogen; Silicon; Temperature sensors; Zinc oxide; Nanocrystalline; Nanoporous; Pd modification; Silicon; Zinc Oxide; hydrogen sensor;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensor Device Technologies and Applications (SENSORDEVICES), 2010 First International Conference on

Conference_Location

Venice

Print_ISBN

978-1-4244-7474-5

Type

conf

DOI

10.1109/SENSORDEVICES.2010.30

Filename

5632122